A 2.46-4.5GHz Low-Noise Variable-Gain Amplifier Based on Noise-canceling Topology and Gm-boosting Technique in 65-nm CMOS-Reference-Cited by-同舟云学术

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A 2.46-4.5GHz Low-Noise Variable-Gain Amplifier Based on Noise-canceling Topology and Gm-boosting Technique in 65-nm CMOS

Published:2022-08-12 Issue: Volume: Page:
ISSN:
Container-title:2022 International Conference on Microwave and Millimeter Wave Technology (ICMMT)
language:
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Author:

Zheng Yishan¹,Feng Wenjie¹,Luo Xiongyao¹,Zhu Haoshen¹,Che Wenquan¹,Xue Quan¹

Affiliation:

1. South China University of Technology of China,Guangdong Provincial Key Laboratory of Millimeter-Wave and Terahertz,Guangzhou,China,510641

Funder

National Natural Science Foundation of China

Guangdong Innovative and Entrepreneurial Research Team Program

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10022051/10022057/10022366.pdf?arnumber=10022366

Reference7 articles.

1. A Wideband Low-Noise Variable-Gain Amplifier With a 3.4 dB NF and up to 45 dB Gain Tuning Range in 130-nm CMOS

2. Design of Full Band UWB Common-Gate LNA

3. A Wideband Noise-Canceling CMOS LNA With Enhanced Linearity by Using Complementary nMOS and pMOS Configurations

4. Design of Wideband LNAs Using Parallel-to-Series Resonant Matching Network Between Common-Gate and Common-Source Stages

5. A Low-Power, Linearized, Ultra-Wideband LNA Design Technique

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