An X-band Low Noise Amplifier in 0.25- $\mu \mathrm{m}$ GaAs pHEMT Process-Reference-Cited by-同舟云学术

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An X-band Low Noise Amplifier in 0.25- $\mu \mathrm{m}$ GaAs pHEMT Process

Published:2022-08-12 Issue: Volume: Page:
ISSN:
Container-title:2022 International Conference on Microwave and Millimeter Wave Technology (ICMMT)
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Author:

Jiang Yutao¹,Su Guo-Dong¹,Zhou Cong¹,Lv Jinjie¹,Liu Jun¹

Affiliation:

1. Hangzhou Dianzi University,Zhejiang Provincial Laboratory of Integrated Circuit Design,Hangzhou,Zhejiang,China,310018

Funder

National Key Research and Development Program of China

Key Laboratory of 3D Micro/Nano Fabrication

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10022051/10022057/10023269.pdf?arnumber=10023269

Reference8 articles.

1. A Reconfigurable Low Noise Amplifier for X/Ku Band

2. Highly linear X-band GaN-based low-noise amplifier

3. Design and Analysis of a DC–43.5-GHz Fully Integrated Distributed Amplifier Using GaAs HEMT–HBT Cascode Gain Stage

4. A 3.1–10.6 GHz Ultra-Wideband Low Noise Amplifier With 13-dB Gain, 3.4-dB Noise Figure, and Consumes Only 12.9 mW of DC Power

5. X-Band Robust Current-Shared GaN Low Noise Amplifier for Receiver Applications

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Based on 0.15μm GaAs Process X-Band Low Power Low Noise Amplifier;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27

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