Nonlinear Circuit Model Analysis of RF High-Power Transistor Package Shell
Author:
Affiliation:
1. School of Electronics and Information, Hangzhou Dianzi University,Zhejiang Provincial Key Lab of Large-Scale Integrated Circuit Design,Hangzhou,Zhejiang,China,310018
Funder
National NSFC
Zhejiang Provincial NSF
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10022051/10022057/10023112.pdf?arnumber=10023112
Reference4 articles.
1. A new method for determining the FET small-signal equivalent circuit
2. Equivalent-circuit modeling and verification of metal-ceramic packages for rf and microwave power transistors;tao;IEEE Trans Micro Theory Tech,1999
3. Novel packaging design for high-power GaN-on-Si high electron mobility transistors (HEMTs)
4. A Novel Small-Signal Model for Bulk FinFETs Accommodating Self-Heating Behaviors
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