Author:
Wang Ziru,Yang Xin,Ding Yifei,Wang Jun
Cited by
8 articles.
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1. SiC MOSFET Full Junction Temperature Estimation Modeling Method Based on Data Driving;2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia);2024-05-17
2. A Screening Method for Improving Transient Current Sharing of Paralleled SiC MOSFETs Based on Spectral Clustering;2024 IEEE Applied Power Electronics Conference and Exposition (APEC);2024-02-25
3. Analytical Model of Fast-Switching GaN HEMTs in Bridge-Leg Considering Nonlinear Characteristics;2023 IEEE Energy Conversion Congress and Exposition (ECCE);2023-10-29
4. Refined Electrical Modelling of Power MOSFETs Based on Physical Information;2023 5th International Conference on System Reliability and Safety Engineering (SRSE);2023-10-20
5. Static and Dynamic Characterization of a 1.2 kV SiC MOSFET in Third Quadrant;2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe);2023-09-04