Device Characteristics of AlGaN/GaN MOS-HEMTs Using High-$k$ Praseodymium Oxide Layer-Reference-Cited by-同舟云学术

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Device Characteristics of AlGaN/GaN MOS-HEMTs Using High-$k$ Praseodymium Oxide Layer

Published:2008-11 Issue:11 Volume:55 Page:3305-3309
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Chiu Hsien-Chin,Yang Chih-Wei,Lin Yung-Hsiang,Lin Ray-Ming,Chang Liann-Be,Horng Kuo-Yang

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/4668541/04668565.pdf?arnumber=4668565

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Review of GaN Channel-Based MOSHEMTs for Next-Generation Medium/Low-Voltage Rating and High-Speed RF Power Applications;Journal of Electronic Materials;2024-06-04

2. Influence of pulsed laser deposited hafnium oxide thin film as gate dielectric on the fabrication of Al0.1Ga0.9N/GaN MOS-HEMT;Materials Science in Semiconductor Processing;2023-01

3. Vertical GaN/InGaN/GaN heterostructure tunnel field-effect transistor: DC and analog/RF performance;International Journal of Modern Physics B;2022-12-03

4. High Electron Mobility Transistor: Physics-Based TCAD Simulation and Performance Analysis;HEMT Technology and Applications;2022-06-24

5. Design and analysis of 10 nm T-gate enhancement-mode MOS-HEMT for high power microwave applications;Journal of Science: Advanced Materials and Devices;2019-03

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