Hot-Electron Capture for CHEI Programming in SONOS-Type Flash Memory Using High- $k$ Trapping Layer-Reference-Cited by-同舟云学术

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Hot-Electron Capture for CHEI Programming in SONOS-Type Flash Memory Using High- $k$ Trapping Layer

Published:2008-06 Issue:6 Volume:55 Page:1502-1510
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Zhang Gang,Yoo Won Jong,Ling Chung-Ho

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/4527049/04505444.pdf?arnumber=4505444

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Synaptic Tunnel Field-Effect Transistors for Extremely-Low-Power Operation;IEEE Electron Device Letters;2022-07

2. Physical principles and current status of emerging non-volatile solid state memories;Electronic Materials Letters;2015-07

3. (Invited) Improved Operation Characteristics in Charge-Trapping Flash Memory Devices with Engineered Dielectric Stack and SiGe Channel;ECS Transactions;2013-08-31

4. Enhanced Programming and Erasing Speeds in P-Channel Charge-Trapping Flash Memory Device With SiGe Buried Channel;IEEE Electron Device Letters;2012-09

5. Substrate-Bias Assisted Hot Electron Injection Method for High-Speed, Low-Voltage, and Multi-Bit Flash Memories;Japanese Journal of Applied Physics;2011-12-01

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