A Fully Three-Dimensional Atomistic Quantum Mechanical Study on Random Dopant-Induced Effects in 25-nm MOSFETs-Reference-Cited by-同舟云学术

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A Fully Three-Dimensional Atomistic Quantum Mechanical Study on Random Dopant-Induced Effects in 25-nm MOSFETs

Published:2008-07 Issue:7 Volume:55 Page:1720-1726
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Jiang Xiang-Wei,Deng Hui-Xiong,Luo Jun-Wei,Li Shu-Shen,Wang Lin-Wang

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/4545026/04545035.pdf?arnumber=4545035

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Three-dimensional optimal multi-level Monte–Carlo approximation of the stochastic drift–diffusion–Poisson system in nanoscale devices;Journal of Computational Electronics;2018-01-04

3. The optimal multilevel Monte-Carlo approximation of the stochastic drift–diffusion-Poisson system;Computer Methods in Applied Mechanics and Engineering;2017-05

4. Impact of geometric, thermal and tunneling effects on nano-transistors;Journal of Computational Physics;2015-06

5. A Physics-Based Three-Dimensional Analytical Model for RDF-Induced Threshold Voltage Variations;IEEE Transactions on Electron Devices;2011

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