high-performance and high-reliability 80-nm gate-length DTMOS with indium super steep retrograde channel-Reference-Cited by-同舟云学术

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high-performance and high-reliability 80-nm gate-length DTMOS with indium super steep retrograde channel

Published:2000 Issue:12 Volume:47 Page:2379-2384
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Tiao-Yuan Huang ,Yao-Jen Lee ,Tien-Sheng Chao ,Coming Chen ,Chun-Yen Chang ,Sun-Jay Chang

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/19165/00887025.pdf?arnumber=887025

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Supersteep Retrograde Channel on FinFET;Sensors and Materials;2018-11-20

2. Analysis of the relationship between the kink effect and the indium levels in MOS transistors;Materials Science and Engineering: B;2013-12

3. Trap Energy Levels Associated with Indium and Boron Impurities in SiO[sub 2];Electrochemical and Solid-State Letters;2006

4. A novel dynamic threshold Voltage MOSFET (DTMOS) using heterostructure channel of Si/sub 1-y/C/sub y/ interlayer;IEEE Electron Device Letters;2005-10

5. Modelling of the dynamic threshold MOSFET;IEE Proceedings - Circuits, Devices and Systems;2005

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