Effect of Device Layout on the Stability of RF MOSFETs-Reference-Cited by-同舟云学术

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Effect of Device Layout on the Stability of RF MOSFETs

Published:2013-05 Issue:5 Volume:61 Page:1861-1869
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Oh Yongho,Rieh Jae-Sung

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx7/22/6512606/06494353.pdf?arnumber=6494353

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Exploring tunable arsenide/antimonide tunneling interfaced junctionless TFET for gas sensing applications;Materials Science and Engineering: B;2024-07

2. RF modeling – II;GaN Transistor Modeling for RF and Power Electronics;2024

3. Study of Analog/Rf and Stability Investigation of Surrounded Gate Junctionless Graded Channel MOSFET(SJLGC MOSFET);Silicon;2021-10-05

4. Impact of device parameter variation on RF performance of gate electrode workfunction engineered (GEWE)-silicon nanowire (SiNW) MOSFET;Journal of Computational Electronics;2015-06-18

5. Modeling the Impact of Multi-Fingering Microwave MOSFETs on the Source and Drain Resistances;IEEE Transactions on Microwave Theory and Techniques;2014-12

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