GaN HEMT Class ${\hbox{E}}^{2}$ Resonant Topologies for UHF DC/DC Power Conversion-Reference-Cited by-同舟云学术

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GaN HEMT Class ${\hbox{E}}^{2}$ Resonant Topologies for UHF DC/DC Power Conversion

Published:2012-12 Issue:12 Volume:60 Page:4220-4229
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Garcia José A.,Marante Reinel,de las Nieves Ruiz Lavin María

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx5/22/6384897/06340365.pdf?arnumber=6340365

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Load-Invariant Double Class-E/F2 Resonant Topology for UHF DC-DC Power Conversion;2023 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC);2023-11-08

2. A Zero-Transient Dual-Frequency Control for Class-E Resonant DC–DC Converters;IEEE Transactions on Power Electronics;2023-02

3. High‐frequency single‐switch PFC with frequency‐modulation controlled class‐E2 converter;IET Power Electronics;2021-06-02

4. GaN-Based Technology for 5G Applications;Lecture Notes in Electrical Engineering;2021

5. Design of a Self-Driving Transistor-Based RF-DC Converter Based on Optimized Harmonic-Tuned Rectification Waveforms;IEEE Transactions on Microwave Theory and Techniques;2020-10

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