240 GHz and 272 GHz Fundamental VCOs Using 32 nm CMOS Technology-Reference-Cited by-同舟云学术

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240 GHz and 272 GHz Fundamental VCOs Using 32 nm CMOS Technology

Published:2013-12 Issue:12 Volume:61 Page:4461-4471
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Landsberg Naftali,Socher Eran

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx7/22/6677550/06670796.pdf?arnumber=6670796

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-Power 150/245-GHz Fundamental Oscillators With 12.1/$-$2.54-dBm Peak Output Power for Phased Array Transceivers;IEEE Journal of Solid-State Circuits;2024

2. A Compact 240 GHz Differential Fundamental Oscillator with -94.2dBc/Hz Phase Noise and 5.4% DC-to-RF Efficiency in 22nm FDSOI;ESSCIRC 2023- IEEE 49th European Solid State Circuits Conference (ESSCIRC);2023-09-11

3. A 157.8–166.3 GHz Fundamental Oscillator Achieving −181.9 dBc/Hz FoM in 65 nm CMOS;IEEE Transactions on Terahertz Science and Technology;2023-01

4. High-Efficiency Millimeter-Wave CMOS Oscillator Design Using Port Voltage/Current Optimization and T-Embedding Networks;IEEE Transactions on Terahertz Science and Technology;2022-11

5. CMOS and BiCMOS Technologies;Reconfigurable Circuits and Technologies for Smart Millimeter-Wave Systems;2022-05-26

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