A 20/40-GHz Dual-Band Voltage-Controlled Frequency Source in 0.13-$\mu{\hbox {m}}$ CMOS-Reference-Cited by-同舟云学术

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A 20/40-GHz Dual-Band Voltage-Controlled Frequency Source in 0.13-$\mu{\hbox {m}}$ CMOS

Published:2011-08 Issue:8 Volume:59 Page:2008-2016
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Yang Ching-Yuan,Chang Chih-Hsiang,Lin Jung-Mao,Chang Hsuan-Yu

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx5/22/5983338/05783320.pdf?arnumber=5783320

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A 42 GHz low phase noise Colpitts VCO in 180-nm SiGe BiCMOS;Journal of Physics: Conference Series;2023-10-01

2. Invited: An Active Filter Balun and Frequency Doubler for Parametric Phase Noise Reduction Systems;2023 IEEE 66th International Midwest Symposium on Circuits and Systems (MWSCAS);2023-08-06

3. A 30-GHz Frequency Doubler Using a Current Folding Technique in 90-nm CMOS Technology;2023 12th International Conference on Modern Circuits and Systems Technologies (MOCAST);2023-06-28

4. A V-Band Differential Push–Push Frequency Doubler With a Current-Reuse gm-Boosted Buffer;IEEE Microwave and Wireless Technology Letters;2023-03

5. A 17.5-to-21-GHz Current-Folding Frequency Tripler With >36-dBc Harmonic Rejection in 90-nm CMOS;IEEE Solid-State Circuits Letters;2023

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