Low-Capacitance Low-Voltage Triggered SCR ESD Clamp Using nMOS With Asymmetric Drain for RF ICs-Reference-Cited by-同舟云学术

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Low-Capacitance Low-Voltage Triggered SCR ESD Clamp Using nMOS With Asymmetric Drain for RF ICs

Published:2011-02 Issue:2 Volume:59 Page:360-367
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Park Jae-Young,Kim Dae-Woo,Son Young-Sang,Ha Jong-Chan,Song Jong-Kyu,Jang Chang-Soo,Jung Won-Young

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx5/22/5712899/05613964.pdf?arnumber=5613964

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Power Consumption of Integrated Low-Power Receivers;IEEE Journal on Emerging and Selected Topics in Circuits and Systems;2014-09

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