Nonlinear Dispersive Modeling of Electron Devices Oriented to GaN Power Amplifier Design-Reference-Cited by-同舟云学术

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Nonlinear Dispersive Modeling of Electron Devices Oriented to GaN Power Amplifier Design

Published:2010-04 Issue:4 Volume:58 Page:710-718
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Raffo Antonio,Vadala Valeria,Schreurs Dominique M M.-P,Crupi Giovanni,Avolio Gustavo,Caddemi Alina,Vannini Giorgio

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx5/22/5446455/05427145.pdf?arnumber=5427145

Cited by 77 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. On the Extraction of Accurate Non-Quasi-Static Transistor Models for E-Band Amplifier Design: Learning From the Past;IEEE Transactions on Microwave Theory and Techniques;2024-09

2. RF modeling – II;GaN Transistor Modeling for RF and Power Electronics;2024

3. Gallium Nitride Power Amplifiers for Ka-Band Satcom Applications: Requirements, Trends, and the Way Forward;IEEE Microwave Magazine;2023-12

4. Harmonic Included CSWPL Model for Broadband PA Design Based on GaN HEMTs;IEEE Transactions on Electron Devices;2023

5. Non-Quasi-Static Intrinsic GaN-HEMT Model;IEEE Transactions on Electron Devices;2022-12

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