A 1.1-Gbit/s 10-GHz Outphasing Modulator With 23-dBm Output Power and 60-dB Dynamic Range in 45-nm CMOS SOI-Reference-Cited by-同舟云学术

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A 1.1-Gbit/s 10-GHz Outphasing Modulator With 23-dBm Output Power and 60-dB Dynamic Range in 45-nm CMOS SOI

Published:2015-07 Issue:7 Volume:63 Page:2289-2300
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Mehrjoo Mohammad S.,Zihir Samet,Rebeiz Gabriel M.,Buckwalter James F.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx7/22/7145496/07116631.pdf?arnumber=7116631

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A SDR Transmitter Baseband-to-IF IC with Digital Out-phasing Exponential Modulation in a 65nm CMOS LPE;2023 International Conference on Microelectronics (ICM);2023-12-17

2. Multilevel Outphasing With Over-the-Air Combining in Large Antenna Arrays;IEEE Transactions on Communications;2023-12

3. Outphasing Modulator for Secure Communicationin 0.1THz Band;2021 IEEE International Symposium on Broadband Multimedia Systems and Broadcasting (BMSB);2021-08-04

4. Tri-Phasing Modulation for Efficient and Wideband Radio Transmitters;IEEE Transactions on Circuits and Systems I: Regular Papers;2018-09

5. ${W}$ -Band Direct-Modulation >20-Gb/s Transmit and Receive Building Blocks in 32-nm SOI CMOS;IEEE Journal of Solid-State Circuits;2017-09

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