A New GaN HEMT Equivalent Circuit Modeling Technique Based on X-Parameters

Author:

Essaadali RiadhORCID,Jarndal Anwar,Kouki Ammar B.,Ghannouchi Fadhel M.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Cited by 24 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Exploring Artificial Neural Network for X-Parameter and S-Parameter Modelling of HEMT;Smart Innovation, Systems and Technologies;2024

2. RF modeling – I;GaN Transistor Modeling for RF and Power Electronics;2024

3. Small-Signal Modeling of GaN-on-Diamond HEMT Using ANFIS Method;2023 International Symposium on Networks, Computers and Communications (ISNCC);2023-10-23

4. Signal-Flow-Graph Analysis of Weakly Nonlinear Microwave Circuits Around a Large-Signal Operating Point;IEEE Transactions on Microwave Theory and Techniques;2023-09

5. Implementation of a Current Linear Regulator Based on a GaN HEMT for Laser Diode Manipulations;2023 11th International Conference on Power Electronics and ECCE Asia (ICPE 2023 - ECCE Asia);2023-05-22

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