Funder
National Natural Science Foundation of China
China Postdoctoral Science Foundation
National Key Project of Science and Technology
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Radiation
Cited by
33 articles.
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1. Physics‐based compact models of GaN HEMTs for high power RF applications: A review (Invited Paper);International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2024-07
2. DC‐bias and temperature included CSWPL model for RF power transistors;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2024-03
3. Incorporating DC bias voltage in poly‐harmonic distortion modeling for RF power GaN transistors;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2024-01-11
4. Comparison of ANFIS and ANN for Small-Signal Modelling of GaN HEMT up to 40 GHz;2023 International Conference on Microelectronics (ICM);2023-12-17
5. Small-Signal Modeling of GaN-on-Diamond HEMT Using ANFIS Method;2023 International Symposium on Networks, Computers and Communications (ISNCC);2023-10-23