A 28-GHz Symmetrical Doherty Power Amplifier Using Stacked-FET Cells

Author:

Nguyen Duy P.ORCID,Pham Thanh,Pham Anh-VuORCID

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Cited by 40 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. A 3-W High-Power 32-GHz GaAs Power Amplifier;2024 9th International Conference on Computer and Communication Systems (ICCCS);2024-04-19

2. Comparator Based Envelope Tracking for RF PA Using FinFET;2024 11th International Conference on Reliability, Infocom Technologies and Optimization (Trends and Future Directions) (ICRITO);2024-03-14

3. A Linearity-Improved 24–29-GHz GaN MMIC Doherty Power Amplifier With Reconfigurable Self-Adaptive Peaking Gate Bias Network;IEEE Transactions on Microwave Theory and Techniques;2024

4. Power amplifiers monolithic microwave integrated circuit design for 5G applications;New Materials and Devices Enabling 5G Applications and Beyond;2024

5. A Gallium Nitride (GaN) Doherty power amplifier chip design based on series RC stability network;International Journal of Circuit Theory and Applications;2023-12-26

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