Hybrid Current-Mode Class-S Power Amplifier With GaN Schottky Diode Using Chip-On-Board Technique for 955 MHz LTE Signal-Reference-Cited by-同舟云学术

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Hybrid Current-Mode Class-S Power Amplifier With GaN Schottky Diode Using Chip-On-Board Technique for 955 MHz LTE Signal

Published:2013-12 Issue:12 Volume:61 Page:4168-4178
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Park Jun-Chul,Yook Jong-Gwan,Park Bong Hyuk,Jeon Namcheol,Seo Kwang-Seok,Kim Dongsu,Lee Woo-Sung,Yoo Chan-Sei

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx7/22/6677544/06665160.pdf?arnumber=6665160

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Class S Power Amplifier System for Radio Applications in the HF Band;2024 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR);2024-01-21

2. A Digital Combining Applied to the Multilevel Pulse Modulated Polar Transmitter;IEEE Access;2023

3. Concurrent Multiband Digital Outphasing Transmitter Architecture Using Multidimensional Power Coding;IEEE Transactions on Microwave Theory and Techniques;2015-02

4. Evaluation of GaN Transistors Having Two Different Gate-Lengths for Class-S PA Design;Journal of electromagnetic engineering and science;2014-09-30

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