Optimal Definition of Class F for Realistic Transistor Models
Author:
Funder
PAPIIT
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Radiation
Link
http://xplorestaging.ieee.org/ielx7/22/8058014/08038245.pdf?arnumber=8038245
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A Class-F Power Amplifier Design Using a Commercial Nonlinear Embedding Model;2023 IEEE MTT-S Latin America Microwave Conference (LAMC);2023-12-06
2. Analysis of Efficiency-Limiting Factors Resulting from Transistor Current Source on Class-F and Inverse Class-F Power Amplifiers;IEICE Transactions on Electronics;2022-10-01
3. Nonlinear Embedding Model for Waveform Engineering Motivated PA Design;2022 IEEE 22nd Annual Wireless and Microwave Technology Conference (WAMICON);2022-04-27
4. High‐efficiency hybrid continuous mode power amplifier with input and output harmonic engineering;International Journal of RF and Microwave Computer-Aided Engineering;2021-12-19
5. A novel design methodology for extended continuous class-F power amplifiers in wireless applications;Wireless Networks;2021-07-29
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