A 110–134-GHz SiGe Amplifier With Peak Output Power of 100–120 mW-Reference-Cited by-同舟云学术

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A 110–134-GHz SiGe Amplifier With Peak Output Power of 100–120 mW

Published:2014-12 Issue:12 Volume:62 Page:2990-3000
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Lin Hsin-Chang,Rebeiz Gabriel M.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx7/22/6971049/06918553.pdf?arnumber=6918553

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1. Low-Loss D-Band SIW Power Divider for Integrated Systems;2024 United States National Committee of URSI National Radio Science Meeting (USNC-URSI NRSM);2024-01-09

2. A 120-to-142-GHz Compact Balanced Power Amplifier Utilizing Novel Slow-Wave Coupled Line in 40-nm CMOS;IEEE Transactions on Circuits and Systems I: Regular Papers;2024

3. An 18.6-dBm, 8-Way-Combined D-Band Power Amplifier with 21.6% PAE in 22-nm FD-SOI CMOS;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16

4. An integrated spiral DGS and an open stub meander-line resonator in the 0.13-µm BiCMOS technology for a 18-GHz band oscillator;Journal of Electromagnetic Waves and Applications;2023-09-24

5. Design Miniaturized Millimeter-Wave Butterworth Bandpass Filters in 0.13-µm BiCMOS Technology for 5G Wireless Applications;2023-07-27

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