New Ultra-High-Isolation RF Switch Architecture and Its Use for a 10–38-GHz 0.18-$\mu$m BiCMOS Ultra-Wideband Switch-Reference-Cited by-同舟云学术

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New Ultra-High-Isolation RF Switch Architecture and Its Use for a 10–38-GHz 0.18-$\mu$m BiCMOS Ultra-Wideband Switch

Published:2011-02 Issue:2 Volume:59 Page:345-353
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Huynh Cuong,Nguyen Cam

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx5/22/5712899/05682376.pdf?arnumber=5682376

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An SP10T Switch With Reconfigurable Matching and Symmetrical Routing Topologies Functioning From DC to 18 GHz;IEEE Journal of Solid-State Circuits;2024

2. Design of multi-frequency point, high-isolation switches for micro-channel plate data acquisition;Review of Scientific Instruments;2023-10-01

3. Wideband Millimeter-Wave SPST Switch in 100-nm GaN-on-Si Using Strong Mutual Coupling;IEEE Transactions on Circuits and Systems II: Express Briefs;2023-06

4. An 11–40-GHz High-Power Switch With Miniaturized High-Order Topology Using 100-nm GaN-on-Si HEMTs;IEEE Transactions on Electron Devices;2022-11

5. A Novel GaN/SiC MMIC Gain Switch Using a Resonant Bidirectional FET Amplifier;2021 51st European Microwave Conference (EuMC);2022-04-04

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