Hot carrier-induced SOI MOSFET degradation under AC stress conditions-Reference-Cited by-同舟云学术

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Hot carrier-induced SOI MOSFET degradation under AC stress conditions

Published:2002-03 Issue:3 Volume:23 Page:157-159
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Jae-Ki Lee ,Nag-Jong Choi ,Yun-Bong Hyun ,Chong-Gun Yu ,Jean-Pierre Colinge ,Jong-Tae Park

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/21303/00988823.pdf?arnumber=988823

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. New Compatible Stress-Complementary BCD Technology for Deep Trench Isolation;2022 10th International Symposium on Next-Generation Electronics (ISNE);2023-05-12

2. Comparison of the instability in device characteristics for thin-film SOI power n- and p-MOSFETs at high temperature under AC stress;Microelectronics Reliability;2021-11

3. Hot-Carrier Instability of nMOSFETs Under Pseudorandom Bit Sequence Stress;IEEE Electron Device Letters;2016-04

4. The Hot-Carrier-Induced Degradation of SoI LIGBT Under AC Stress Conditions;IEEE Electron Device Letters;2013-12

5. Hybrid Integration of Ultrathin-Body Partially Insulated MOSFETs and a Bulk MOSFET for Better IC Performance: A Multiple-$V_{\rm TH}$ Technology Using Partial SOI Structure;IEEE Electron Device Letters;2010-01

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