A Fully-Integrated Half-Bridge GaN Driver for Bidirectional Power Transfer
Author:
Affiliation:
1. School of Microelectronics, Southern University of Science and Technology,Shenzhen,China
Funder
National Natural Science Foundation of China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10181241/10181318/10181464.pdf?arnumber=10181464
Reference8 articles.
1. A New Design Technique for Sub-Nanosecond Delay and 200 V/ns Power Supply Slew-Tolerant Floating Voltage Level Shifters for GaN SMPS
2. A 3-to-40V VIN 10-to-50MHz 12W isolated GaN driver with self-excited tdead minimizer achieving 0.2ns/0.3ns tdead, 7.9% minimum duty ratio and 50V/ns CMTI
3. A GaN Driver for a Bi-Directional Buck/Boost Converter With Three-Level VGS Protection and Optimal-Point Tracking Dead-Time Control
4. A fully integrated three-level 11.6nC gate driver supporting GaN gate injection transistors
5. An Integrated Driver With Bang-Bang Dead-Time Control and Charge Sharing Bootstrap Circuit for GaN Synchronous Buck Converter
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