InP-Based Quantum-Dot Infrared Photodetectors With High Quantum Efficiency and High-Temperature Imaging-Reference-Cited by-同舟云学术

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InP-Based Quantum-Dot Infrared Photodetectors With High Quantum Efficiency and High-Temperature Imaging

Published:2008-06 Issue:6 Volume:8 Page:936-941
ISSN:1530-437X
Container-title:IEEE Sensors Journal
language:
Short-container-title:IEEE Sensors J.

Author:

Tsao Stanley,Lim Hochul,Seo Hosung,Zhang Wei,Razeghi Manijeh

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Instrumentation

Link

http://xplorestaging.ieee.org/ielx5/7361/4529162/04529221.pdf?arnumber=4529221

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low-Dimensional Materials and State-of-the-Art Architectures for Infrared Photodetection;Sensors;2018-11-27

2. Introduction to Infrared Detectors and Quantum Dots;Structural, Optical and Spectral Behaviour of InAs-based Quantum Dot Heterostructures;2017-08-05

3. Dark Current Modeling and Noise Analysis in Quantum Dot Infrared Photodetectors;IEEE Sensors Journal;2015-10

4. Barrier Selection Rules for Quantum Dots-in-a-Well Infrared Photodetector;IEEE Journal of Quantum Electronics;2012-10

5. InAs/(In)GaSb Type II Strained Layer Superlattice Detectors;Comprehensive Semiconductor Science and Technology;2011

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