Physics-based SS and SSLS variability assessment of microwave devices through efficient sensitivity analysis

Author:

Bertazzi F.,Bonani F.,Guerrieri S. Donati,Ghione G.

Publisher

IEEE

Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. TCAD Analysis of GaN HEMT Output Conductance Through Trap Rate Equation Green’s Functions;2023 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC);2023-11-08

2. Spatial distribution of microwave device harmonic electrical variables through T-dependent TCAD simulations;IEEE EUROCON 2023 - 20th International Conference on Smart Technologies;2023-07-06

3. Physics-based Analysis to Address Critical Aspects of FinFET Mm-wave Applications: Variability and Thermal Management;2019 PhotonIcs & Electromagnetics Research Symposium - Spring (PIERS-Spring);2019-06

4. A comprehensive review on microwave FinFET modeling for progressing beyond the state of art;Solid-State Electronics;2013-02

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