Impact of Memory Voltage Scaling on Accuracy and Resilience of Deep Learning Based Edge Devices-Reference-Cited by-同舟云学术

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Impact of Memory Voltage Scaling on Accuracy and Resilience of Deep Learning Based Edge Devices

Published:2020-04 Issue:2 Volume:37 Page:84-92
ISSN:2168-2356
Container-title:IEEE Design & Test
language:
Short-container-title:IEEE Des. Test

Author:

Denkinger Benoit W.^ORCID,Ponzina Flavio^ORCID,Basu Soumya S.^ORCID,Bonetti Andrea^ORCID,Balasi Szabolcs^ORCID,Ruggiero Martino,Peon-Quiros Miguel^ORCID,Rossi Davide^ORCID,Burg Andreas^ORCID,Atienza David^ORCID

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Software

Link

http://xplorestaging.ieee.org/ielx7/6221038/9075303/08868100.pdf?arnumber=8868100

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Approximate Fault-Tolerant Neural Network Systems;2024 IEEE European Test Symposium (ETS);2024-05-20

2. Dynamic Scheduling for Event-Driven Embedded Industrial Applications;2023 IFIP/IEEE 31st International Conference on Very Large Scale Integration (VLSI-SoC);2023-10-16

3. X-NVDLA: Runtime Accuracy Configurable NVDLA Based on Applying Voltage Overscaling to Computing and Memory Units;IEEE Transactions on Circuits and Systems I: Regular Papers;2023-05

4. Bit-Line Computing for CNN Accelerators Co-Design in Edge AI Inference;IEEE Transactions on Emerging Topics in Computing;2023-04-01

5. A Hardware/Software Co-Design Vision for Deep Learning at the Edge;IEEE Micro;2022-11-01

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