A Multi-terminal Silicon Carbide Power Module with Low Parasitic Inductance
Author:
Affiliation:
1. Xidian University,The Key Laboratory of Ministry of Education for Wide Bandgap Semiconductor Materials and Devices, School of Microelectronics,Xi’an,China,710071
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx8/10567049/10567050/10567466.pdf?arnumber=10567466
Reference11 articles.
1. Experimental parametric study of the parasitic inductance influence on MOSFET switching characteristics
2. A 1200-V, 60-A SiC MOSFET Multichip Phase-Leg Module for High-Temperature, High-Frequency Applications
3. Stray Inductance Reduction of Commutation Loop in the P-cell and N-cell-Based IGBT Phase Leg Module
4. Experimental parametric study of the parasitic inductance influence on MOSFET switching characteristics
5. A frequency-domain study on the effect of DC-link decoupling capacitors
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