Establishment of Degradation Model and Transfer Model for P-channel Power MOSFETs Under Negative Bias Temperature Stress
Author:
Affiliation:
1. Harbin Institute of Technology,School of Electrical Engineering and Automation,China
2. Beijing Aerospace Automatic Control Institute,China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx8/10567049/10567050/10567064.pdf?arnumber=10567064
Reference9 articles.
1. Power Electronics Reliability: State of the Art and Outlook
2. Lifetime estimation of p-channel power VDMOSFETs applied in automotive applications
3. Modeling of NBTS Effects in P-Channel Power VDMOSFETs
4. Negative bias temperature instability mechanisms in p-channel power VDMOSFETs
5. On the generation and recovery of interface traps in MOSFETs subjected to NBTI, FN, and HCI stress
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