Low Coupling Capacitance Gate Driver Power Supply for Series-Connected Silicon Carbide Intelligent Power Module-Reference-Cited by-同舟云学术

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Low Coupling Capacitance Gate Driver Power Supply for Series-Connected Silicon Carbide Intelligent Power Module

Published:2024-05-17 Issue: Volume: Page:2230-2235
ISSN:
Container-title:2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia)
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Author:

Zheng Yongjie¹,Ding Lijian²,Yu Xiangdong³,Zhao Shuang²,Luo Yunchao⁴,Chai Pinpin⁴,Li Helong³

Affiliation:

1. Anhui University of Science and Technology,Huainan,China,232001

2. Hefei Comprehensive National Science Center (Anhui Energy Laboratory),Institute of Energy,Hefei,China,230031

3. Hefei University of Technology,Hefei,China,230009

4. Zinsight Technology (Shanghai) Co., Ltd,Shanghai,China,201100

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10567049/10567050/10567149.pdf?arnumber=10567149

Reference12 articles.

1. Design and Performance of High Voltage Chip-Level Series-Connected SiC MOSFET Module

2. Performance Evaluation of High-Power SiC MOSFET Modules in Comparison to Si IGBT Modules

3. Silicon Carbide Power Transistors: A New Era in Power Electronics Is Initiated

4. Instability in Half-Bridge Circuits Switched With Wide Band-Gap Transistors

5. An Active Voltage Balancing Control Based on Adjusting Driving Signal Time Delay for Series-Connected SiC MOSFETs

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