An Accurate and Effective Spice Model of 6.5kV SiC MOSFET with Parasitic Parameters Analysis in Medium-Voltage Power Module
Author:
Affiliation:
1. Xi’an Jiaotong University,State Key Laboratory of Electrical Insulation and Power Equipment,Xi’an,China
2. National Center of Technology Innovation for Wide-Bandgap Semiconductors of Nanjing,Nanjing,China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx8/10567049/10567050/10567836.pdf?arnumber=10567836
Reference8 articles.
1. A Survey of Wide Bandgap Power Semiconductor Devices
2. SiC versus Si—Evaluation of Potentials for Performance Improvement of Inverter and DC–DC Converter Systems by SiC Power Semiconductors
3. Modeling of Wide-Bandgap Power Semiconductor Devices—Part II
4. New generation 10kv sic power mosfet and diodes for industrial applications;Casady
5. Temperature-Dependent Characterization, Modeling, and Switching Speed-Limitation Analysis of Third-Generation 10-kV SiC MOSFET
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