Realization of an Online Junction Temperature Monitoring Scheme of SiC MOSFET Based on On-state Voltage Drop-Reference-Cited by-同舟云学术

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Realization of an Online Junction Temperature Monitoring Scheme of SiC MOSFET Based on On-state Voltage Drop

Published:2024-05-17 Issue: Volume: Page:5109-5114
ISSN:
Container-title:2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia)
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Author:

Liang Gengle¹,Wang Huimin²,Ge Xinglai¹,Wang Yi³

Affiliation:

1. Jiaotong University,School of Electrical Engineering Southwest,Chengdu,China

2. Technology National Railway Administration of P. R. C,Key Laboratory of Railway Industry of Maglev,Shanghai,China

3. Ministry of Education (Southwest Jiaotong University),Key Laboratory of Magnetic Suspension Technology and Maglev Vehicle,Chengdu,China

Funder

Natural Science Foundation of Sichuan Province

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10567049/10567050/10567705.pdf?arnumber=10567705

Reference13 articles.

1. A Thermal Network Model for Multichip Power Modules Enabling to Characterize the Thermal Coupling Effects

2. Evaluation of Aging's Effect on Temperature-Sensitive Electrical Parameters in SiC mosfets

3. A Junction Temperature Monitoring Method for IGBT Modules Based on Turn-Off Voltage With Convolutional Neural Networks

4. An junction temperature estimation method in SiC MOSFET modules based on the turn-off delay time and vds overshoot;Wang

5. A new extraction method of SiC power MOSFET threshold voltage using a physical approach

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