Experimental observation of the dependence of avalanche noise on carrier ionization coefficients-Reference-Cited by-同舟云学术

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Experimental observation of the dependence of avalanche noise on carrier ionization coefficients

Published:1972 Issue:12 Volume:60 Page:1555-1556
ISSN:0018-9219
Container-title:Proceedings of the IEEE
language:
Short-container-title:Proc. IEEE

Author:

Naqvi I.M.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx5/5/31163/01450886.pdf?arnumber=1450886

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Germanium-tin multiple quantum well on silicon avalanche photodiode for photodetection at two micron wavelength;Semiconductor Science and Technology;2016-07-25

2. Chapter 3 Silicon and Germanium Avalanche Photodiodes;Semiconductors and Semimetals;1985

3. Avalanche-noise dependence on avalanche-photodiode structures;Electronics Letters;1977

4. Excess noise in silicon avalanche photodiodes;Journal of Applied Physics;1976-04

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