A Ka-band MMIC Power Amplifier in 100-nm GaN-on-Si technology for Space Applications
Author:
Affiliation:
1. DET - Politecnico di Torino,Turin,Italy
2. DEI - Università di Bologna,Bologna,Italy
3. TTI Norte,Santander,Spain
4. ESA ESTEC,Noordwijk,The Netherlands
5. DEE - Università Degli Studi di Roma Tor Vergata,Rome,Italy
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10321701/10321765/10321803.pdf?arnumber=10321803
Reference22 articles.
1. A High Efficiency, Ka-Band Pulsed Gallium Nitride Power Amplifier for Radar Applications
2. Improved linearity of power amplifier GaN MMIC for Ka-band SATCOM
3. A Ka band 15W power amplifier MMIC based on GaN HEMT technology
4. High Efficiency 5W/10W 32 - 38GHz Power Amplifier MMICs Utilizing Advanced 0.15µm GaN HEMT Technology;chen;CSICS-2016,2016
5. Limitations and Implementation Strategies of Interstage Matching in a 6-W, 28–38-GHz GaN Power Amplifier MMIC
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