Edge-epitaxial Growth of Mos2- Ws2lateral heterostructure and their optoelectronic properties-Reference-Cited by-同舟云学术

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Edge-epitaxial Growth of Mos2- Ws2lateral heterostructure and their optoelectronic properties

Published:2022-12-11 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE International Conference on Emerging Electronics (ICEE)
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Author:

Nayak Biswajeet¹,Chakraborty Suman Kumar¹,Banerjee Rajdeep²,Ray Purbasha¹,Kundu Baisali¹,Bisoyi Sagar³,Basori Rabaya⁴,Pradhan Gopal K.³,Goswami Dipak Kumar²,Sahoo Prasana Kumar¹

Affiliation:

1. Indian Institute of Technology Kharagpur,Quantum Materials and Device Research Lab, Materials Science Centre,Kharagpur,India

2. Indian Institute of Technology Kharagpur,Department of Physics,Kharagpur,India

3. Indian Institute of Technology,Nanoscience and Technology,Kharagpur,India

4. School of Applied Sciences, Kalinga Institute of Technology- Deemed to be University,Dept. of Physics,Bhubaneswar,India

Funder

Indian Institute of Technology Kharagpur

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10117590/10117577/10117691.pdf?arnumber=10117691

Reference19 articles.

1. The development of integrated circuits based on two-dimensional materials

2. Frequency Doubler and Universal Logic Gate Based on Two-Dimensional Transition Metal Dichalcogenide Transistors with Low Power Consumption

3. One-pot growth of two-dimensional lateral heterostructures via sequential edge-epitaxy

4. Simultaneous electrical and thermal rectification in a monolayer lateral heterojunction

5. Synthesis of lateral heterostructure of 2D materials for optoelectronic devices: challenges and opportunities

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