Extremely Scaled Silicon Nanosheet Transistors-Reference-Cited by-同舟云学术

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Extremely Scaled Silicon Nanosheet Transistors

Published:2022-12-11 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE International Conference on Emerging Electronics (ICEE)
language:
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Author:

Nandan Keshari¹,Agarwal Amit²,Bhowmick Somnath³,Chauhan Yogesh Singh¹

Affiliation:

1. Indian Institute of Technology Kanpur,Department of Electrical Engineering,Kanpur,India,208016

2. Indian Institute of Technology Kanpur,Department of Physics,Kanpur,India,208016

3. Indian Institute of Technology Kanpur,Department of Material Science and Engineering (MSE),Kanpur,India,208016

Funder

Humboldt Foundation

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10117590/10117577/10117934.pdf?arnumber=10117934

Reference20 articles.

1. Atomistic Study of Acoustic Phonon Limited Mobility in Extremely Scaled Si and Ge Films

2. Compact Model for Geometry Dependent Mobility in Nanosheet FETs

3. An updated version of wannier90: A tool for obtaining maximally-localised Wannier functions

4. QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials

5. Generalized many-channel conductance formula with application to small rings

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