Temperature-dependent bit-error-rate characterization of ultralow-noise GaAs MESFET's for 3-Gb/s operation
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Published:1993-02
Issue:2
Volume:14
Page:57-59
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ISSN:0741-3106
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Container-title:IEEE Electron Device Letters
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language:
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Short-container-title:IEEE Electron Device Lett.
Author:
Laskar J.,Feng M.,Kruse J.
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials