Performance Improvement in RF LDMOS Transistors Using Wider Drain Contact-Reference-Cited by-同舟云学术

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Performance Improvement in RF LDMOS Transistors Using Wider Drain Contact

Published:2013-09 Issue:9 Volume:34 Page:1085-1087
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Chen Kun-Ming,Chen Bo-Yuan,Chiu Chia-Sung,Huang Guo-Wei,Chen Chun-Hao,Lin Horng-Chih,Huang Tiao-Yuan,Chen Ming-Yi,Yang Yu-Chi,Jaw Brenda,Wang Kai-Li

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/6583991/06566056.pdf?arnumber=6566056

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis of DCTLDMOS on SOI for Power Amplifier Applications;Silicon;2022-05-16

2. Two‐dimensional simulation studies of the breakdown voltage of a p channel LDMOS;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2021-02-14

3. Double Gate Drain Extended MOS with Low on-Resistance for RF Application;Silicon;2020-03-21

4. Analog and RF Characteristics of Power FinFET Transistors With Different Drain-Extension Designs;IEEE Transactions on Electron Devices;2018-10

5. Improving the Gate-Induced Drain Leakage and On-State Current of Fin-Like Thin Film Transistors with a Wide Drain;Applied Sciences;2018-08-20

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