Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory-Reference-Cited by-同舟云学术

Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory

Published:2013-03 Issue:3 Volume:34 Page:399-401
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Chang Kuan-Chang,Tsai Tsung-Ming,Chang Ting-Chang,Wu Hsing-Hua,Chen Jung-Hui,Syu Yong-En,Chang Geng-Wei,Chu Tian-Jian,Liu Guan-Ru,Su Yu-Ting,Chen Min-Chen,Pan Jhih-Hong,Chen Jian-Yu,Tung Cheng-Wei,Huang Hui-Chun,Tai Ya-Hsiang,Gan Der-Shin,Sze Simon M.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/6468094/06461910.pdf?arnumber=6461910

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