AlGaN/GaN Schottky Barrier Diodes on Silicon Substrates With Selective Si Diffusion for Low Onset Voltage and High Reverse Blocking-Reference-Cited by-同舟云学术

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AlGaN/GaN Schottky Barrier Diodes on Silicon Substrates With Selective Si Diffusion for Low Onset Voltage and High Reverse Blocking

Published:2013-08 Issue:8 Volume:34 Page:981-983
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Lian Yi-Wei,Lin Yu-Syuan,Yang Jui-Ming,Cheng Chih-Hsuan,Hsu Shawn S. H.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/6565378/06553203.pdf?arnumber=6553203

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4. A Simulation Study of Multi-Channel AlInN/GaN Schottky Barrier Diodes and Experimental Comparison with Low On-resistance of 1.9 Ω•mm;2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-02-07

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