Superior Improvements in GIDL and Retention by Fluorine Implantation in Saddle-Fin Array Devices for Sub-40-nm DRAM Technology-Reference-Cited by-同舟云学术

Superior Improvements in GIDL and Retention by Fluorine Implantation in Saddle-Fin Array Devices for Sub-40-nm DRAM Technology

Published:2013-09 Issue:9 Volume:34 Page:1124-1126
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Yang Chia-Ming,Wang Jer-Chyi,Lee Wei-Ping,Lee Chien-Chi,Lin Chih-Hung,Lee Chung Yuan,Lin Jo-Hui,Chen Hsin-Huei,Hsiao Chih-Yuan,Chang Ruey-Dar,Lai Chao-Sung

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/6583991/06553604.pdf?arnumber=6553604

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