28-nm 2T High-<formula formulatype="inline"><tex Notation="TeX">$K$</tex></formula> Metal Gate Embedded RRAM With Fully Compatible CMOS Logic Processes-Reference-Cited by-同舟云学术

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28-nm 2T High-$K$ Metal Gate Embedded RRAM With Fully Compatible CMOS Logic Processes

Published:2013-10 Issue:10 Volume:34 Page:1253-1255
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Mei Chin Yu,Shen Wen Chao,Wu Chun Hsiung,Chih Yue-Der,King Ya-Chin,Lin Chrong Jung,Tsai Ming-Jinn,Tsai Kan-Hsueh,Chen Frederick T.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/6606835/06588327.pdf?arnumber=6588327

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