An improved test structure for recombination lifetime profile measurements in very thick silicon wafers
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Published:1999-01
Issue:1
Volume:20
Page:45-47
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ISSN:0741-3106
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Container-title:IEEE Electron Device Letters
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language:
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Short-container-title:IEEE Electron Device Lett.
Author:
Daliento S.,Sanseverino A.,Spirito P.
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials