Thermal Nitridation of Si and SiO/sub 2/ for VLSI-Reference-Cited by-同舟云学术

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Thermal Nitridation of Si and SiO/sub 2/ for VLSI

Published:1985-02 Issue:1 Volume:20 Page:26-43
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:en
Short-container-title:IEEE J. Solid-State Circuits

Author:

Moslehi M.M.,Saraswat K.C.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx5/4/22600/01052274.pdf?arnumber=1052274

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1. Van der Waals and Graphene-Like Layers of Silicon Nitride and Aluminum Nitride;2D Materials;2019-10-09

2. Kinetics and thermodynamics of Si(111) surface nitridation in ammonia;Journal of Crystal Growth;2016-05

3. Ultra-thin SiNx in superlattice via nitridation of a-Si in-situ hot wire chemical vapor deposition;Thin Solid Films;2014-08

4. GaN nano-pendeo-epitaxy on Si(111) substrates;physica status solidi (c);2009-01-14

5. Oxidation and Gate Dielectrics;Handbook of Semiconductor Manufacturing Technology, Second Edition;2007-07-09

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