Machine Learning Based V-ramp V<sub>BD</sub> Predictive Model Using OCD-measured Fab Parameters for Early Detection of MOL Reliability Risk-Reference-Cited by-同舟云学术

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Machine Learning Based V-ramp V_BD Predictive Model Using OCD-measured Fab Parameters for Early Detection of MOL Reliability Risk

Published:2023-03 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE International Reliability Physics Symposium (IRPS)
language:
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Author:

Rhee Sungman¹,Kim Hyunjin¹,Park Sangku¹,Uemura Taiki¹,Hwang Yuchul¹,Choo Seungjin²,Kim Jinju²,Rhee Hwasung²,Chung Shinyoung²

Affiliation:

1. Quality Reliability Synergy, Samsung Electronics, Co.,Ltd.,Hwa-seong si,Republic of Korea

2. Samsung Foundry, Samsung Electronics, Co.,Ltd.,Hwa-seong si,Republic of Korea

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10117589/10117581/10117962.pdf?arnumber=10117962

Reference7 articles.

1. The Adoption of Machine Learning in the Measurement of Copper Contact on the Main Chip in Advanced 3D NAND Technology Nodes

2. Field acceleration factor extraction in MOL and BEOL TDDB

3. New methodology for modelling MOL TDDB coping with variability

4. Electrical test prediction using hybrid metrology and machine learning

5. Machine learning for predictive electrical performance using OCD

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. V-Ramp V_BD Prediction Method Using OCD-Spectrum and Deep-Learning, and Application to Early Detection of V-NAND Low Metal Reliability Risk;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

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