A World First QLC RRAM: Highly Reliable Resistive-Gate Flash with Record 108 Endurance and Excellent Retention
Author:
Affiliation:
1. Institute of Electronics, National Chiao Tung University,Dept. of Electrical Engineering,Taiwan
2. National Taiwan Normal University,Dept. of Mechatronics Engineering,Taiwan
Funder
Ministry of Science and Technology, Taiwan
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10117589/10117581/10117748.pdf?arnumber=10117748
Reference15 articles.
1. Four-Bits-Per-Memory One-Transistor-and-Eight-Resistive-Random-Access-Memory (1T8R) Array
2. m” A 22nm 96Kx144 RRAM Macro with a Self-Tracking Reference and a Low Ripple Charge Pump;chou;Symp VLSI Technology,2020
3. Improvement of State Stability in Multi-Level Resistive Random-Access Memory (RRAM) Array for Neuromorphic Computing
4. RADAR: A Fast and Energy-Efficient Programming Technique for Multiple Bits-Per-Cell RRAM Arrays
5. A 3.6Mb 10.lMb/mm2 Embedded Non-Volatile ReRAM Macro in 22nm FinFET Technology with Adaptive Forming/Set/Reset Schemes Yielding Down to 0.5V with Sensing Time of 5ns at 0.7V;jain;IEEE International Solid-State Circuits Conference (ISSCC),2019
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