Analysis of Intermittent Single-bit Failure on 10-nm node generation DRAM Devices
Author:
Affiliation:
1. DRAM Product & Technology, Memory Business Samsung Electronics,Hwaseong-si,Gyeonggi-do,Republic of Korea
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10117589/10117581/10117671.pdf?arnumber=10117671
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5. Comparison of interface trap density measured by capacitance/subthreshold/charge-pumping methods for n-MOSFETs with Si-implanted gate-SiO/sub 2/;toshihiro;ICMTS 2001. Proceedings of the 2001 International Conference on Microelectronic Test Structures (Cat. No.01CH37153),2001
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