Engineering Custom TLP I-V Characteristic Using a SCR-Diode Series ESD Protection Concept
Author:
Affiliation:
1. Indian Institute of Science,Department of ESE,Bangalore,Karnataka,India
2. Alpha & Omega Semiconductor,Sunnyvale,USA
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10117589/10117581/10118220.pdf?arnumber=10118220
Reference8 articles.
1. Silicon-Controlled Rectifier Stacking Structure for High-Voltage ESD Protection Applications
2. Study on ESD protection design with stacked low-voltage devices for high-voltage applications
3. Overview of on-chip electrostatic discharge protection design with SCR-based devices in CMOS integrated circuits;ker;IEEE Transactions on Device and Materials Reliability,2005
4. Comparison between high-holding-voltage SCR and stacked low-voltage devices for ESD protection in high-voltage applications;dai;IEEE Transactions on Electron Devices,2018
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