A cost-effective 0.25 μm L/sub eff/ BiCMOS technology featuring graded-channel CMOS (GCMOS) and a quasi-self-aligned (QSA) NPN for RF wireless applications
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx5/7107/19141/00886185.pdf?arnumber=886185
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Physics, Technology, and Modeling of Complementary Asymmetric MOSFETs;IEEE Transactions on Electron Devices;2010-10
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3. Comprehensive ESD protection for RF inputs;Microelectronics Reliability;2005-02
4. Design and Optimization of Vertical SiGe Thyristors for On-Chip ESD Protection;IEEE Transactions on Device and Materials Reliability;2004-12
5. Simulation of oxide trapping noise in submicron n-channel MOSFETs;IEEE Transactions on Electron Devices;2003-03
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