CBC8: A 0.25 µm SiGe-CBiCMOS technology platform on thick-film SOI for high-performance analog and RF IC design-Reference-Cited by-同舟云学术

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CBC8: A 0.25 µm SiGe-CBiCMOS technology platform on thick-film SOI for high-performance analog and RF IC design

Published:2010-10 Issue: Volume: Page:
ISSN:
Container-title:2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)
language:
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Author:

Babcock Jeff A.,Cestra Greg,van Noort Wibo,Allard Paul,Ruby Scott,Tao Jon,Malone Robert,Buchholz Alan,Lavrovskaya Natasha,Yindeepol Wipawan,Printy Craig,Ramdani Jamal,Labonte Andre,McCulloh Heather,Leng Yaojian,McCarthy Pat,Getchell Don,Sehgal Akshey,Krakowski Tracey,Desai Saurabh,Joyce Chris,Hojabri Peyman,Decoutere Stefaan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5655256/5667896/05667971.pdf?arnumber=5667971

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Performance analysis of SiGe-HBT-based transimpedance amplifiers with nonconstant gain-bandwidth technique;Analog Integrated Circuits and Signal Processing;2020-07-02

2. Impact of Collector Length on the Performance of NPN SiGe HBT on Thin Film SOI;Journal of Low Power Electronics;2014-09-01

3. Epilayer Optimization of NPN SiGe HBT with n+ Buried Layer Compatible With Fully Depleted SOI CMOS Technology;JSTS:Journal of Semiconductor Technology and Science;2014-06-30

4. A Technique to Improve the Performance of an NPN HBT on Thin-Film SOI;IEEE Journal of the Electron Devices Society;2013-04

5. An Investigation on the Optimization and Scaling of Complementary SiGe HBTs;IEEE Transactions on Electron Devices;2013-01

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